| CODE | PHY3275 | ||||||
| TITLE | Physics of Semiconductor Devices | ||||||
| UM LEVEL | 03 - Years 2, 3, 4 in Modular Undergraduate Course | ||||||
| MQF LEVEL | 6 | ||||||
| ECTS CREDITS | 2 | ||||||
| DEPARTMENT | Physics | ||||||
| DESCRIPTION | Course Work: The course has a website at http://www.phys.um.edu.mt/NOTES/PHY3275 which contains links to three problem sheets and model answers. Aims: The aim of the study-unit is to provide students a basic understanding of the fundamental semiconductor devices, namely the junction diode, the Schottky diode, the bipolar junction transistor, the junction field-effect transistor and the MOSFET. The focus of the course is two-fold: first, the properties of the device in are described in terms of the underlying physics, and then the use of these properties in simple circuits is demonstrated. Learning outcomes: At the end of the study-unit, students should be able to: • understand the basic concepts of electron transport in homogeneous semiconductors, diffusion and drift currents, and the continuity equation; • understand the basic mechanisms behind the development of a barrier potential at a junction, and be able to compute the current across the barrier in various circumstances; • understand the limitations of these simple models, particularly as regards the geometry of real structures and breakdown effects; • be able to describe the structure of the basic semiconductor devices (the junction diode, the Schottky diode, the bipolar junction transistor, the junction field-effect transistor and the MOSFET); • be able to apply the physical mechanisms to the basic structures and obtain the device equations and basic parameters of the basic devices (with the exception of the MOSFET); • have a qualitative understanding of the principle of operation of the MOSFET, and be able to compare and contrast its device equations with those of the junction FET; • be able determine the operation of the device in simple circuits (details of biasing are not entered into). Study-unit content: 1. Semiconductor Basics Equilibrium electron statistics Electron Transport in Semiconductors Basic equations for semiconductor device operation Devices based on homogeneous semiconductors Device technology 2. Bipolar devices The p-n junction diode Photo-diodes and LED’s Simple diode circuits The bipolar junction transistor Small-signal equivalent circuits 3. Unipolar Devices Metal-semiconductor junctions The Schottky Diode The Junction Field-Effect Transistor (JFET) The Metal-Oxide-Silicon FET (MOSFET) Small-signal equivalent circuits Recommended texts: S.S. Islam, Semiconductor Physics and Devices, Oxford University Press B. Van Zeghbroeck, Principles of Semiconductor Devices available online at http://ece-www.colorado.edu/~bart/book/intro.htm References S.M.Sze, Physics of Semiconductor Devices, John Wiley S.O.Kasap, Electronic Materials and Devices, McGraw Hill K.F. Brennan, The Physics of Semiconductors, Cambridge University Press J.S. Blakemore, Solid State Physics, Cambridge University Press |
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| ADDITIONAL NOTES | Pre-requisite Study-unit: PHY3150 | ||||||
| STUDY-UNIT TYPE | Lecture | ||||||
| METHOD OF ASSESSMENT |
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| LECTURER/S | Louis Zammit Mangion |
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The University makes every effort to ensure that the published Courses Plans, Programmes of Study and Study-Unit information are complete and up-to-date at the time of publication. The University reserves the right to make changes in case errors are detected after publication.
The availability of optional units may be subject to timetabling constraints. Units not attracting a sufficient number of registrations may be withdrawn without notice. It should be noted that all the information in the description above applies to study-units available during the academic year 2023/4. It may be subject to change in subsequent years. |
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