| Issue Date | Title | Author(s) |
| 2001 | Czochralski process for growing single crystal silicon by controlling the cooling rate : WO 01/21861 A1 | McCallum, Kirk D.; Brock, Alexander W.; Mobsen, Banan; Falster, Robert J.; Holzer, Joseph C.; Johnson, Bayard K.; Kim, Chang B.; Kimbel, Steven L.; Lu, Zheng; Mutti, Paolo; Voronkov, Vladimir V.; Mule’ Stagno, Luciano; Libbert, Jeffrey L. |
| 2012 | Density functional theory study of solid benzene | Pace, Eric (2012) |
| 2000 | Effect of silicon content, austenitising temperature and variable austempering on mechanical properties of ductile iron | Mahaya, Abdulmula Mohamed (2000) |
| 2003 | Epitaxial wafer substantially free of grown-in defects : U. S. Patent No. 6,565,649 B2 | Mule’ Stagno, Luciano; Fei, Lu; Holzer, Joseph C.; Korb, Harold W.; Falster, Robert J. |
| 2003 | Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same : U. S. Patent Application Publication No. 2003/0136961 A1 | Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Phillips, Richard J.; Kulkarni, Milind; Banan, Mohsen; Brunkhorst, Stephen J. |
| 2003 | Method for producing czochralski silicon free of agglomerated self-interstitial defects : U. S. Patent No. 6,635,587 B1 | Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Holzer, Joseph C. |
| 2001 | Method for producing czochralski silicon free of agglomerated self-interstitial defects : WO 01/21865 A1 | Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Holzer, Joseph C. |
| 2002 | Process for detecting agglomerated intrinsic point defects by metal decoration : U.S. Patent No. 6,391,662 B1 | Mule’ Stagno, Luciano; Falster, Robert J. |
| 2007 | Process for making silicon wafers with stabilized oxygen precipitate nucleation centers : U. S. Patent No. 7,201,800 B2 | Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Phillips, Richard J.; Kulkarni, Milind; Banan, Mohsen; Brunkhorst, Stephen J. |
| 2003 | Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation | McCallum, Kirk D.; Brock, Alexander W.; Banan, Mohsen; Falster, Robert J.; Holzer, Joseph C.; Johnson, Bayard K.; Bum Kim, Chang; Kimbel, Steven L.; Lu, Zheng; Metti, Paolo; Voronkov, Vladimir V.; Mule’ Stagno, Luciano; Libbert, Jeffrey L. |
| 2003 | Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation : U. S. Patent Application Publication No. 2003/0196587 A1 | McCallum, Kirk D.; Alexander, W. Brock; Banan, Mohsen; Falster, Robert J.; Holzer, Joseph C.; Johnson, Bayard K.; Bum Kim, Chang; Kimbel, Steven L.; Lu, Zheng; Mutti, Paolo; Voronkov, Vladimir V.; Mule’ Stagno, Luciano; Libbert, Jeffrey L. |
| 2004 | Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same : U. S. Patent No. 6,808,781 B2 | Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Phillips, Richard J.; Kulkarni, Milind; Banan, Mohsen; Brunkhorst, Stephen J. |
| 2006 | Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects : U. S. Patent No. 7,097,718 B2 | Mule’ Stagno, Luciano; Fei, Lu; Holzer, Joseph C.; Korb, Harold W.; Falster, Robert J. |
| 2002 | A technique for delineating defects in silicon | Mule’ Stagno, Luciano |
| 2002 | A theoretical and experimental analysis of macrodecoration of defects in monocrystalline silicon | Kulkarni, Milind S.; Libbert, Jeffrey L.; Keltner, Steven; Mule’ Stagno, Luciano |
