Browsing by Subject Silicon

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Showing results 8 to 15 of 15 < previous 
Issue DateTitleAuthor(s)
2002Process for detecting agglomerated intrinsic point defects by metal decoration : U.S. Patent No. 6,391,662 B1Mule’ Stagno, Luciano; Falster, Robert J.
2007Process for making silicon wafers with stabilized oxygen precipitate nucleation centers : U. S. Patent No. 7,201,800 B2Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Phillips, Richard J.; Kulkarni, Milind; Banan, Mohsen; Brunkhorst, Stephen J.
2003Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleationMcCallum, Kirk D.; Brock, Alexander W.; Banan, Mohsen; Falster, Robert J.; Holzer, Joseph C.; Johnson, Bayard K.; Bum Kim, Chang; Kimbel, Steven L.; Lu, Zheng; Metti, Paolo; Voronkov, Vladimir V.; Mule’ Stagno, Luciano; Libbert, Jeffrey L.
2003Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation : U. S. Patent Application Publication No. 2003/0196587 A1McCallum, Kirk D.; Alexander, W. Brock; Banan, Mohsen; Falster, Robert J.; Holzer, Joseph C.; Johnson, Bayard K.; Bum Kim, Chang; Kimbel, Steven L.; Lu, Zheng; Mutti, Paolo; Voronkov, Vladimir V.; Mule’ Stagno, Luciano; Libbert, Jeffrey L.
2004Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same : U. S. Patent No. 6,808,781 B2Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Phillips, Richard J.; Kulkarni, Milind; Banan, Mohsen; Brunkhorst, Stephen J.
2006Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects : U. S. Patent No. 7,097,718 B2Mule’ Stagno, Luciano; Fei, Lu; Holzer, Joseph C.; Korb, Harold W.; Falster, Robert J.
2002A technique for delineating defects in siliconMule’ Stagno, Luciano
2002A theoretical and experimental analysis of macrodecoration of defects in monocrystalline siliconKulkarni, Milind S.; Libbert, Jeffrey L.; Keltner, Steven; Mule’ Stagno, Luciano