Accurate small-signal modelling of a double barrier resonant tunnelling diode (DBRTD)

Abstract

A small-signal equivalent circuit model for a double-barrier resonant tunneling diode (DBRTD) over the frequency range of 45 MHz to 13 GHz is developed. This model is capable of predicting small-signal microwave properties to within +or-5% of measurement. This model is based on frequency-independent parameters and accurately predicts the small-signal properties of the device using voltage-dependent differential conductance obtained from the DC I-V characteristic, and capacitance determined over the entire test frequency range. It is believed that this was made possible primarily by an accurate de-embedding technique which was facilitated by the choice of package and simple mount design, which together allowed S11 measurements to be made within an almost entirely uniform 3.5-mm coaxial line.