Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/26382
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dc.contributor.authorMule’ Stagno, Luciano-
dc.date.accessioned2018-02-05T09:03:17Z-
dc.date.available2018-02-05T09:03:17Z-
dc.date.issued2002-
dc.identifier.citationMule Stagno, L. (2002). A technique for delineating defects in silicon. Solid State Phenomena, 82-84, 753-758.en_GB
dc.identifier.urihttps://www.um.edu.mt/library/oar//handle/123456789/26382-
dc.description.abstractA decoration and etching technique was developed to delineate several types of defects in silicon wafers, slugs and slabs. The technique was originally developed to detect interstitial type (A) defects but it has proved highly effective in decorating all kinds of other defects. Being fast, and requiring no special equipment except an inexpensive muffle furnace and a dedicated etch bench the technique has quickly become an integral part of our characterization portfolio. We discuss below how we have used this technique and its advantages over other methods used to detect A-defects.en_GB
dc.language.isoenen_GB
dc.publisherScientific.Neten_GB
dc.rightsinfo:eu-repo/semantics/openAccessen_GB
dc.subjectEtchingen_GB
dc.subjectSiliconen_GB
dc.subjectCopperen_GB
dc.titleA technique for delineating defects in siliconen_GB
dc.typearticleen_GB
dc.rights.holderThe copyright of this work belongs to the author(s)/publisher. The rights of this work are as defined by the appropriate Copyright Legislation or as modified by any successive legislation. Users may access this work and can make use of the information contained in accordance with the Copyright Legislation provided that the author must be properly acknowledged. Further distribution or reproduction in any format is prohibited without the prior permission of the copyright holder.en_GB
dc.description.reviewedpeer-revieweden_GB
dc.identifier.doi10.4028/www.scientific.net/SSP.82-84.753-
dc.publication.titleSolid State Phenomenaen_GB
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