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|Title:||Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation|
|Authors:||McCallum, Kirk D.|
Brock, Alexander W.
Falster, Robert J.
Holzer, Joseph C.
Johnson, Bayard K.
Bum Kim, Chang
Kimbel, Steven L.
Voronkov, Vladimir V.
Mule Stagno, Luciano
Libbert, Jeffrey L.
|Publisher:||Patent Application Publication|
|Citation:||McCallum, K.D., Brock, A. W., Banan, M., Falster, R. J., Holzer, J. C., Johnson, B. K.,…Libbert, J. L. (2003). Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation. United States: 2003/0196587 A1.|
|Abstract:||The present invention relates to a process for growing a single crystal silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects in that region. The process comprising cooling the ingot from the temperature of solidification to a temperature of less than 800° C. and, as part of said cooling step, quench cooling a region of the constant diameter portion of the ingot having a predominant intrinsic point defect through the temperature of nucleation for the agglomerated intrinsic point defects for the intrinsic point defects which predominate in the region.|
|Appears in Collections:||Scholarly Works - InsSE|
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