Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/26397
Title: Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation
Authors: McCallum, Kirk D.
Brock, Alexander W.
Banan, Mohsen
Falster, Robert J.
Holzer, Joseph C.
Johnson, Bayard K.
Bum Kim, Chang
Kimbel, Steven L.
Lu, Zheng
Metti, Paolo
Voronkov, Vladimir V.
Mule Stagno, Luciano
Libbert, Jeffrey L.
Keywords: Manufacturing processes
Silicon
Issue Date: 2003
Publisher: Patent Application Publication
Citation: McCallum, K.D., Brock, A. W., Banan, M., Falster, R. J., Holzer, J. C., Johnson, B. K.,…Libbert, J. L. (2003). Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation. United States: 2003/0196587 A1.
Abstract: The present invention relates to a process for growing a single crystal silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects in that region. The process comprising cooling the ingot from the temperature of solidification to a temperature of less than 800° C. and, as part of said cooling step, quench cooling a region of the constant diameter portion of the ingot having a predominant intrinsic point defect through the temperature of nucleation for the agglomerated intrinsic point defects for the intrinsic point defects which predominate in the region.
URI: https://www.um.edu.mt/library/oar//handle/123456789/26397
Appears in Collections:Scholarly Works - InsSE

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