Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/26397
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dc.date.accessioned2018-02-05T10:19:11Z-
dc.date.available2018-02-05T10:19:11Z-
dc.date.issued2003-
dc.identifier.citationMcCallum, K.D., Brock, A. W., Banan, M., Falster, R. J., Holzer, J. C., Johnson, B. K.,…Libbert, J. L. (2003). Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation. United States: 2003/0196587 A1.en_GB
dc.identifier.urihttps://www.um.edu.mt/library/oar//handle/123456789/26397-
dc.description.abstractThe present invention relates to a process for growing a single crystal silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects in that region. The process comprising cooling the ingot from the temperature of solidification to a temperature of less than 800° C. and, as part of said cooling step, quench cooling a region of the constant diameter portion of the ingot having a predominant intrinsic point defect through the temperature of nucleation for the agglomerated intrinsic point defects for the intrinsic point defects which predominate in the region.en_GB
dc.language.isoenen_GB
dc.publisherPatent Application Publicationen_GB
dc.rightsinfo:eu-repo/semantics/openAccessen_GB
dc.subjectManufacturing processesen_GB
dc.subjectSiliconen_GB
dc.titleProcess for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleationen_GB
dc.typepatenten_GB
dc.rights.holderThe copyright of this work belongs to the author(s)/publisher. The rights of this work are as defined by the appropriate Copyright Legislation or as modified by any successive legislation. Users may access this work and can make use of the information contained in accordance with the Copyright Legislation provided that the author must be properly acknowledged. Further distribution or reproduction in any format is prohibited without the prior permission of the copyright holder.en_GB
dc.description.reviewedN/Aen_GB
dc.contributor.creatorMcCallum, Kirk D.-
dc.contributor.creatorBrock, Alexander W.-
dc.contributor.creatorBanan, Mohsen-
dc.contributor.creatorFalster, Robert J.-
dc.contributor.creatorHolzer, Joseph C.-
dc.contributor.creatorJohnson, Bayard K.-
dc.contributor.creatorBum Kim, Chang-
dc.contributor.creatorKimbel, Steven L.-
dc.contributor.creatorLu, Zheng-
dc.contributor.creatorMetti, Paolo-
dc.contributor.creatorVoronkov, Vladimir V.-
dc.contributor.creatorMule Stagno, Luciano-
dc.contributor.creatorLibbert, Jeffrey L.-
Appears in Collections:Scholarly Works - InsSE

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