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dc.contributor.authorKulkarni, Milind S.-
dc.contributor.authorLibbert, Jeffrey L.-
dc.contributor.authorKeltner, Steven-
dc.contributor.authorMule Stagno, Luciano-
dc.date.accessioned2018-02-09T10:17:38Z-
dc.date.available2018-02-09T10:17:38Z-
dc.date.issued2002-
dc.identifier.citationKulkarni, M. S., Libbert, J., Keltner, S., & Mule Stagno, L. (2002). A theoretical and experimental analysis of macrodecoration of defects in monocrystalline silicon. Journal of The Electrochemical Society, 149(2), G153-G165.en_GB
dc.identifier.urihttps://www.um.edu.mt/library/oar//handle/123456789/26658-
dc.description.abstractMicrodefect distribution in a monocrystalline silicon wafer is identified by saturating the wafer with copper at a high temperature followed by copper precipitate growth through rapid cooling followed by surface polishing and subsequent microdefect-decorating etching. The decorated microdefect field consists of etch pits that are formed by the difference in the etching rates of the precipitate influenced region around microdefects, and the etching rate of the surrounding defect-free silicon. Interplay between liquid-phase mass-transport effects and surface kinetics plays a key role in the microdefect decoration. It is shown that the macrodecoration of microdefects is typically realized in the absence of significant effects of the liquid-phase diffusion. The developed phenomenological model leads to classification of etchants as either polishing or potentially decorating and to identification of conditions necessary for an efficient microdefect decoration. The competing effects of kinetics toward microdefect decoration and liquid-phase transport toward surface polishing are quantified by theoretically derived solutions for the decorating efficiency and the polishing efficiency. Autoerosion of the microdefects by mildly polishing etchants is also quantified. Analytical expressions for the microdefect-decorating and microdefect-polishing conditions are presented. Finally, decorating and polishing etchants are experimentally identified from a group of etchants and the proposed theory is verified by experimental data.en_GB
dc.language.isoenen_GB
dc.publisherECS Digital Libraryen_GB
dc.rightsinfo:eu-repo/semantics/openAccessen_GB
dc.subjectImpurity centersen_GB
dc.subjectSiliconen_GB
dc.titleA theoretical and experimental analysis of macrodecoration of defects in monocrystalline siliconen_GB
dc.typearticleen_GB
dc.rights.holderThe copyright of this work belongs to the author(s)/publisher. The rights of this work are as defined by the appropriate Copyright Legislation or as modified by any successive legislation. Users may access this work and can make use of the information contained in accordance with the Copyright Legislation provided that the author must be properly acknowledged. Further distribution or reproduction in any format is prohibited without the prior permission of the copyright holder.en_GB
dc.description.reviewedpeer-revieweden_GB
dc.identifier.doi10.1149/1.1433473-
dc.publication.titleJournal of The Electrochemical Societyen_GB
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