Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/145723
Title: Instantaneous temperature estimation during short time overload operation of an IGBT
Authors: Xuereb, Justin
Raute, Reiko
Micallef, Alexander
Keywords: Insulated gate bipolar transistors
Electromotive force
Insulated gate bipolar transistors -- Thermal properties
Power electronics -- Equipment and supplies
Issue Date: 2025
Publisher: Institute of Electrical and Electronics Engineers
Citation: Xuereb, J., Raute, R., & Micallef, A. (2025, October). Instantaneous temperature estimation during short time overload operation of an IGBT. 2025 IEEE PES Innovative Smart Grid Technologies Conference Europe (ISGT Europe), Malta.
Abstract: In certain applications, such as motor soft starters, power electronic devices are required to operate only for brief durations. In low-cost product designs, the smallest component sizes are selected and temporarily overloaded during short intervals to minimize component costs and sizes. This paper delves into the current overload performance of an IGBT over a 2-second period. While the temperature of the die rises rapidly, the case temperature increase is delayed due to its thermal impedance, avoiding the possibility of a direct die temperature measurement from the case. This study utilizes the emitter PN junction of the IGBT for detecting the die temperature. The paper will provide a summary of the laboratory setup and experimental results to validate the testing methodology.
URI: https://www.um.edu.mt/library/oar/handle/123456789/145723
Appears in Collections:Scholarly Works - FacEngEE

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