Epitaxial silicon wafers substantially free of grown-in defects : U.S. Patent No. 6,284,039 B1

Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/106542

Title:	Epitaxial silicon wafers substantially free of grown-in defects : U.S. Patent No. 6,284,039 B1
Authors:	Mule’ Stagno, Luciano Fei, Lu Holzer, Joseph C. Korb, Harold W. Falster, Robert J.
Keywords:	Semiconductor wafers Ingots Metals -- Heat treatment
Issue Date:	2001
Publisher:	United States Patent and Trademark Office
Citation:	Mule' Stagno, L., Fei, L., Holzer, J. C., Korb, H. W., & Falster, R. J. (2001). Epitaxial silicon wafers substantially free of grown-in defects (U.S. Patent No. 6,284,039). United States.
Abstract:	The present invention is directed to a set of epitaxial Silicon wafers assembled in a wafer cassette, boat or other wafer carrier. Each wafer comprises a single crystal Silicon Sub-Strate having an axially Symmetric region in which Silicon Self-interstitials are the predominant intrinsic point defect and which is Substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a Surface of the Substrate and which is Substantially free of grown-in defects caused by the presence of agglomerated Silicon Self interstitial defects on the Substrate Surface upon which the epitaxial layer is deposited.
URI:	https://www.um.edu.mt/library/oar/handle/123456789/106542
Appears in Collections:	Scholarly Works - InsSE

Files in This Item:

File	Description	Size	Format
Epitaxial silicon wafers substantially free of grown-in defects_ US_Patent_No_6284039_2001.pdf		4.12 MB	Adobe PDF	View/Open