Please use this identifier to cite or link to this item:
https://www.um.edu.mt/library/oar/handle/123456789/106550| Title: | Method for producing czochralski silicon free of agglomerated self-interstitial defects : U. S. Patent No. 6,635,587 B1 |
| Authors: | Mule’ Stagno, Luciano Libbert, Jeffrey L. Holzer, Joseph C. |
| Keywords: | Semiconductor wafers Silicon Metals -- Heat treatment |
| Issue Date: | 2003 |
| Publisher: | United States Patent and Trademark Office |
| Citation: | Mule' Stagno, L., Libbert, J. L., & Holzer, J. C. (2003). Method for producing czochralski silicon free of agglomerated self-interstitial defects. (U. S. Patent No. 6,635,587 B1). United States. |
| Abstract: | A process for heat treating a Silicon wafer to dissolve B-type agglomerated interstitial defects present therein. The process includes heating the Silicon wafer at a temperature for a time sufficient to dissolve B-defects, the wafer being heated to Said temperature at a rate Sufficient to prevent B-defects from becoming Stabilized Such that these defects are rendered incapable of being dissolved. |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/106550 |
| Appears in Collections: | Scholarly Works - InsSE |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Method_for_producing_czochralski_silicon_free_of_agglomerated_self_interstitial_defect_US_Patent_No_6635587B1_2003.pdf | 2.2 MB | Adobe PDF | View/Open |
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