Please use this identifier to cite or link to this item:
https://www.um.edu.mt/library/oar/handle/123456789/106625| Title: | Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation : U. S. Patent Application Publication No. 2003/0196587 A1 |
| Authors: | McCallum, Kirk D. Alexander, W. Brock Banan, Mohsen Falster, Robert J. Holzer, Joseph C. Johnson, Bayard K. Bum Kim, Chang Kimbel, Steven L. Lu, Zheng Mutti, Paolo Voronkov, Vladimir V. Mule’ Stagno, Luciano Libbert, Jeffrey L. |
| Keywords: | Nucleation Silicon Crystals Semiconductors Ingots |
| Issue Date: | 2003 |
| Publisher: | United States Patent and Trademark Office |
| Citation: | McCallum, K., Alexander, W., Banan, M., Falster, R., Holzer, J., Johnson, B., ... & Libbert, J. (2003). Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation. (U. S. Patent Application Publication No. 2003/0196587 A1). United States. |
| Abstract: | The present invention relates to a process for growing a Single crystal Silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is Substantially free of agglomerated intrinsic point defects in that region. The process comprising cooling the ingot from the temperature of solidification to a temperature of less than 800° C. and, as part of said cooling step, quench cooling a region of the constant diameter portion of the ingot having a predominant intrinsic point defect through the temperature of nucleation for the agglomerated intrinsic point defects for the intrinsic point defects which predominate in the region. |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/106625 |
| Appears in Collections: | Scholarly Works - InsSE |
Files in This Item:
Items in OAR@UM are protected by copyright, with all rights reserved, unless otherwise indicated.