Please use this identifier to cite or link to this item:
https://www.um.edu.mt/library/oar/handle/123456789/108574| Title: | Polarisation dependent interband optical absorption in strained nonsquare InGaAs/GaAs quantum wells |
| Authors: | Micallef, Joseph Li, E. Herbert Weiss, Bernard L. |
| Keywords: | Semiconductors -- Analysis Quantum optics Quantum wells |
| Issue Date: | 1992 |
| Publisher: | The Institution of Electrical Engineers |
| Citation: | Micallef, J., Li, E. H., & Weiss, B. L. (1992). Polarisation dependent interband optical absorption in strained nonsquare InGaAs/GaAs quantum well. Electronics Letters, 28(6), 526-528. |
| Abstract: | Results of the effects of an error-function compositional profile, which simulates the effects of disordering, in a strained quantum well structure on the polarisation dependent interband absorption coefficient are presented. Strain and disordering can be combined in quantum well structures to tailor the absorption edge to desired wavelengths. |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/108574 |
| Appears in Collections: | Scholarly Works - FacICTMN |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Polarisation_dependent_interband_optical_absorption_in_strained_nonsquare_InGaAs_GaAs_quantum_wells.pdf Restricted Access | 518.3 kB | Adobe PDF | View/Open Request a copy |
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