Please use this identifier to cite or link to this item:
https://www.um.edu.mt/library/oar/handle/123456789/108575| Title: | Confinement and strain profiles produced by cation interdiffusion in In0,53Ga0.47As/lnP quantum wells |
| Authors: | Micallef, Joseph Li, E. Herbert Weiss, Bernard L. |
| Keywords: | Quantum wells Thermal interface materials Bound states (Quantum mechanics) |
| Issue Date: | 1992 |
| Publisher: | AIP Publishing |
| Citation: | Micallef, J., Li, E. H., & Weiss, B. L. (1992). Confinement and strain profiles produced by cation interdiffusion in In0. 53Ga0. 47As/InP quantum wells. Applied physics letters, 61(4), 435-437. |
| Abstract: | By considering cation interdiffusion only, we show that the confinement profile obtained after disordering a lattice-matched InGaAs/InP single quantum well differs from that of disordered AlGaAs/GaAs and InGaAs/GaAs quantum-well structures. An abrupt confinement profile is maintained even after significant interdiffusion, with a well width equal to that of the as-grown quantum well. In the early stages of disordering, a large strain buildup results. The bulk band gap of the disordered structure, together with the effects of this strain on the band gap, give rise to “miniwells” inside the potential wells. |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/108575 |
| Appears in Collections: | Scholarly Works - FacICTMN |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Confinement_and_strain_profiles_produced_by_cation_interdiffusion_in_In0,3Ga0.47As_lnP_quantum_wells.pdf Restricted Access | 306.25 kB | Adobe PDF | View/Open Request a copy |
Items in OAR@UM are protected by copyright, with all rights reserved, unless otherwise indicated.