Please use this identifier to cite or link to this item:
https://www.um.edu.mt/library/oar/handle/123456789/144881| Title: | TEM study of bonded silicon wafers |
| Authors: | Mule’ Stagno, Luciano Craven, Robert Fraundorf, Philip |
| Keywords: | Silicon-on-insulator technology Semiconductors -- Materials Semiconductor wafers Transmission electron microscopy Semiconductors -- Junctions Ion bombardment |
| Issue Date: | 1995-08 |
| Publisher: | Jones and Begell Publishing |
| Citation: | Mule’ Stagno, L., Craven, R., & Fraundorf, P. (1995, August). TEM study of bonded silicon wafers. Microscopy Society of America 53rd Annual Meeting, USA. 460-461. |
| Abstract: | The promise of higher speed, radiation hard, high temperature capabilities, and increased device density has made SOI ( silicon - on - insulator) an attractive proposition since its conception several years ago. Until recently the methods for its manufacture had been plagued by low yields, and poor quality. Remarkable advances have been made lately resulting in increasing quantities of SOI wafers being sold commercially. (excerpt) |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/144881 |
| Appears in Collections: | Scholarly Works - InsSE |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Tem_study_of_bonded_silicon_wafers(1995).pdf | 489.08 kB | Adobe PDF | View/Open |
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