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https://www.um.edu.mt/library/oar/handle/123456789/144886| Title: | Quantitative defect studies in semiconductor tem samples prepared by low angle ion milling |
| Authors: | Mule’ Stagno, Luciano Holzer, Jacob C. Fraundorf, Philip |
| Keywords: | Transmission electron microscopy Semiconductors -- Defects Semiconductor wafers Ion bombardment Specimens Materials Microstructure |
| Issue Date: | 1995-08 |
| Publisher: | Jones and Begell Publishing |
| Citation: | Mule’ Stagno, L., Holzer, J. C., & Fraundorf, P. (1995, August). Quantitative defect studies in semiconductor tem samples prepared by low angle ion milling. Microscopy Society of America 53rd Annual Meeting, USA. 512-513. |
| Abstract: | Due to the wealth of infonnation both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling. (excerpt). |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/144886 |
| Appears in Collections: | Scholarly Works - InsSE |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Quantitative_defect_studies_in_semiconductor_tem_samples_prepared_by_low_angle_ion_milling(1995).pdf | 378.77 kB | Adobe PDF | View/Open |
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