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Showing results 4 to 16 of 16
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Issue Date
Title
Author(s)
2000
Effect of silicon content, austenitising temperature and variable austempering on mechanical properties of ductile iron
Mahaya, Abdulmula Mohamed (2000)
2003
Epitaxial wafer substantially free of grown-in defects : U. S. Patent No. 6,565,649 B2
Mule’ Stagno, Luciano
;
Fei, Lu
;
Holzer, Joseph C.
;
Korb, Harold W.
;
Falster, Robert J.
2003
Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same : U. S. Patent Application Publication No. 2003/0136961 A1
Mule’ Stagno, Luciano
;
Libbert, Jeffrey L.
;
Phillips, Richard J.
;
Kulkarni, Milind
;
Banan, Mohsen
;
Brunkhorst, Stephen J.
2003
Method for producing czochralski silicon free of agglomerated self-interstitial defects : U. S. Patent No. 6,635,587 B1
Mule’ Stagno, Luciano
;
Libbert, Jeffrey L.
;
Holzer, Joseph C.
2001
Method for producing czochralski silicon free of agglomerated self-interstitial defects : WO 01/21865 A1
Mule’ Stagno, Luciano
;
Libbert, Jeffrey L.
;
Holzer, Joseph C.
2002
Process for detecting agglomerated intrinsic point defects by metal decoration : U.S. Patent No. 6,391,662 B1
Mule’ Stagno, Luciano
;
Falster, Robert J.
2007
Process for making silicon wafers with stabilized oxygen precipitate nucleation centers : U. S. Patent No. 7,201,800 B2
Mule’ Stagno, Luciano
;
Libbert, Jeffrey L.
;
Phillips, Richard J.
;
Kulkarni, Milind
;
Banan, Mohsen
;
Brunkhorst, Stephen J.
2003
Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation
McCallum, Kirk D.
;
Brock, Alexander W.
;
Banan, Mohsen
;
Falster, Robert J.
;
Holzer, Joseph C.
;
Johnson, Bayard K.
;
Bum Kim, Chang
;
Kimbel, Steven L.
;
Lu, Zheng
;
Metti, Paolo
;
Voronkov, Vladimir V.
;
Mule’ Stagno, Luciano
;
Libbert, Jeffrey L.
2003
Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation : U. S. Patent Application Publication No. 2003/0196587 A1
McCallum, Kirk D.
;
Alexander, W. Brock
;
Banan, Mohsen
;
Falster, Robert J.
;
Holzer, Joseph C.
;
Johnson, Bayard K.
;
Bum Kim, Chang
;
Kimbel, Steven L.
;
Lu, Zheng
;
Mutti, Paolo
;
Voronkov, Vladimir V.
;
Mule’ Stagno, Luciano
;
Libbert, Jeffrey L.
2004
Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same : U. S. Patent No. 6,808,781 B2
Mule’ Stagno, Luciano
;
Libbert, Jeffrey L.
;
Phillips, Richard J.
;
Kulkarni, Milind
;
Banan, Mohsen
;
Brunkhorst, Stephen J.
2006
Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects : U. S. Patent No. 7,097,718 B2
Mule’ Stagno, Luciano
;
Fei, Lu
;
Holzer, Joseph C.
;
Korb, Harold W.
;
Falster, Robert J.
2002
A technique for delineating defects in silicon
Mule’ Stagno, Luciano
2002
A theoretical and experimental analysis of macrodecoration of defects in monocrystalline silicon
Kulkarni, Milind S.
;
Libbert, Jeffrey L.
;
Keltner, Steven
;
Mule’ Stagno, Luciano